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IIITDM

Indian Institute of Information Technology, Design and Manufacturing,
(IIITD&M) Kancheepuram, Chennai - 600 127
(An Institute of National Importance Fully Funded by Govt of India)
Faculty Profile

Dr. Binsu J Kailath

Assistant Professor of Electronics Engineering

                           
U. G  :  B.Tech. in Electronics and Communication Engineering,University of Calicut.
P. G  :  M.Tech. in MicroElectronics and VLSI Design, Dept. of Electrical Engineering, IIT Madras.
PhD  :  Ultra Thin Oxide MOS Devices, Dept. of Electrical Engineering, IIT Madras.
 
Email   : bkailath@iiitdm.ac.in       Phone   : +91-44-27476341

Research Interests

  • VLSI Design
  • MOS Device Modeling and Technology
  • MEMS

Memberships in Professional Societies

  • Life Member, ISTE

Employment

    Research
  • 8 Years
    • Teaching
  • 11 Years

Journals

  • Abdul Majeed K K and Binsu J Kailath, “A Novel Phase Frequency Detector for a High Frequency PLL Design”,(2013)Procedia Engineering 64, 377 – 384
  • Binsu J KailathDasGupta, A., DasGupta, N., B N Singh and L M Kukreja (2009): Growth of ultra-thin SiO2 by laser-induced oxidation. Semiconductor Science and Technology 24, 105011
  • Binsu J KailathDasGupta, A. and DasGupta, N. (2009): Ultra Thin Oxide by Chemical Vapour Oxidation of Si. Transactions of Electro Chemical Society22, 1, 151-159.
  • Binsu J KailathDasGupta, N. and DasGupta, A. (2007): Optimization of ac anodization parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide. Solid State Electronics 51, 762-770.
  • Binsu J KailathDasGupta, N. and DasGupta, A. (2007): Electrical and Reliability Characteristics of MOS Devices with ultrathin SiO2 grown in nitric acid solutions. IEEE Transactions on Device and Material Reliability 7, 602-610.
  • Binsu J KailathDasGupta, N. and DasGupta, A. (2007): Improved Electrical Characteristics of MOS devices with gate oxide grown by chemical oxidation. Transactions of Electro Chemical Society 8, 105-110.
  • Binsu J KailathDasGupta, N. and DasGupta, A. (2006): Improved Electrical Characteristics by anodic oxidation with superimposed dc and ac voltages. IETE Journal of Research 5, 357-363

Conferences

  • Abdul Majeed K K and Binsu J Kailath, "CMOS Current Starved Voltage Controlled Oscillator Circuit for a Fast Locking PLL" (2015) in the 12th IEEE India International Conference, INDICON 2015, held in New Delhi from 17th to 20th Dec 2015
  • Abhay Kumar and Binsu J Kailath, “Design of 3stage high frequency CMOS voltage controlled oscillator”, IEEE EDSSC 2015, IEEE International Conference on Electron Devices and Solid-State Circuits held from 1stto 4th June, 2015 in NTU, Singapore
  • E.Papanasam, Binsu J Kailath, “Realization of silicon carbide MIS capacitors with high-K and high-K stack dielectric,” IEEE 12th International conference on solid state and integrated circuit technology (ICSICT)2014, Guilin, China
  • Abdul Majeed K K and Binsu J Kailath, “A Novel Phase Frequency Detector for a High Frequency PLL Design” (2013)International Conference on Design and Manufacturing, IConDM 2013at Indian Institute of Information Technology Design and Manufacturing (IIITD&M) Kancheepuram, Chennai, India-600127 held from 18th- 20th July 2013
  • Abdul Majeed K.K. and Binsu J Kailath, “Low power, High Frequency, Free Dead Zone PFD for a PLL Design, (2013)IEEE Faible Tension FaibleConsommation (Low Voltage Low Power) Conference held in Paris, France from 20th – 21st June 2013
  • S. Deepak and Binsu J Kailath, Optimized MAC unit design, (2012)IEEE EDSSC 2012, IEEE International Conference on Electron Devices and Solid-State Circuits held from December 3-5, 2012 in Bangkok, Thailand
  • HarikrishnanGopalakrishnan, Binsu J Kailath, (2012) “MIM Capacitors with stacked dielectrics” Presented in the International Conference “Tech Connect world 2012” held from 18th to 21st June 2012 in Santa Clara, USA
  • Kalaiselvi, K., Binsu J KailathDasGupta, A., and DasGupta, N. (2009): Ultra thin gate oxide by RTO followed by Anodization, in the Proceedings of the 15th International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, India, December 2009.
  • Binsu J KailathDasGupta, N. and DasGupta, A. (2009) Ultra Thin Oxide by Chemical Vapour Oxidation of Si,ECI International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Xian, China, July-August 2009
  • Binsu J Kailath,DasGupta, N., DasGupta, A., Bhattacharya, S., Armstrong, B.M., Gamble H.S., and McCarthy, J. (2007): Novel low temperature techniques for growth of ultrathin oxides for Strained Si MOS Devices. Proceedings of the 19th IEEE International Conference on Microelectronics (ICM), Cairo, Egypt, December 2007, 429-432.
  • Binsu J Kailath Bhattacharya, S., DasGupta, A., DasGupta, N., McNeill, D.W. and Gamble, H. (2007): Effect of Nitridation on Al/HfO2/Ge MIS Capacitors. Proceedings of the 14th International Workshop on Physics of Semiconductor Devices (IWPSD), Bombay, India, December 2007, 194-197.
  • Binsu J KailathDasGupta, N. and DasGupta, A. (2007) Improved Electrical Characteristics of MOS devices with gate oxide grown by chemical oxidation. ECI International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Barga, Italy, July-August 2007.
  • Binsu J KailathDasGupta, N. and DasGupta, A. (2006): Improved Reliability Characteristics for thermally grown ultrathin gate oxide by optimized anodic oxidation. Proceedings of the International Conference on Reliability and Safety Engineering, Chennai, India, December 2006, 508-514.
  • Binsu J KailathMarathe, V.G., DasGupta, N. and DasGupta, A. (2005): Studies on Chemical oxidation of Silicon with Nitric Acid. Proceedings of the 13th International Workshop on Physics of Semiconductor Devices (IWPSD), New Delhi, India, December 2005, 701-704.
  • Binsu J KailathDasGupta, N., DasGupta, A., Bhattacharya, S., Armstrong, B.M., Gamble H.S., Misra, Pankaj and Kukreja, L.M. (2005): Electrical Characterisation of Al/SiO2-TiO2/Strained Si/Relaxed SiGe MTOS Capacitors. International Conference on MEMS and Nanotechnology, Kharagpur, India, December 2005.